ITE Γραφείο Διαμεσολάβησης > Τεχνολογίες του ΙΤΕ, διαθέσιμες για συμφωνία μεταφοράς τεχνολογίας
Τεχνολογίες του ΙΤΕ, διαθέσιμες για συμφωνία μεταφοράς τεχνολογίας
Institute of Electronic Structure & Laser (IESL)
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Title | Solid-state transparent materials and devices for transparent opto-electronic applications | |
Group | Microelectronics Research Group, IESL | |
Researcher | Dr. Elias Aperathitis | |
Abstract | Transparent devices and circuits, i.e., devices for transparent applications, is an emerging technology which is based on transparent (non-polymer) materials. Transparent materials not necessarily oxides, with tuned, controlled and reproducible optical and electrical properties (transparency at specific wavelength range and doping, carrier concentration and conductivity) can lead to transparent devices like diodes, PVs, TTFT, LEDs, detectors, etc, with applications to telecommunications, automobile industry, architecture, energy, and more. | |
Description |
Transparent materials and particularly transparent conductive oxides (TCOs) have been widely used as coatings for heat reflective windows,
anti-static instrument windows, as well as vehicle window heaters, electrochromic devices, solar cells, Liquid Crystal Displays and
electrochemical cells. Transparent conductive materials continue to be in high demand because of the immediate applications they can
find in a variety of new technologies, ranging from thin film coatings and sensor devices to light-detecting and emitting devices in
telecommunications.
The main feature of an active device in optoelectronics, either for light detecting or light emitting applications, is the p-n junction. One of the main factors that can affect the output performance of the devices is the electrical characteristics of the diode in the dark. Other factors are the absorption of photons and the collection of photogenerated carriers, the recombination mechanisms (radiative or non-radiative) and a damage-free processing procedure of the diode structure (ohmic contact formation and etching steps) which will lead to the device. However, the development of transparent p/n junctions is still an open technological challenge:
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Current development phase | The technology for both n- and p-type transparent materials and devices is at the development phase. | |
Type of collaboration sought | Research Institutes and Academic partners for joint R&D activities in existing and new applications, to contribute to further investigation on transparent materials and devices, to the commercialization of the technology, to facilitate market penetration. |